Eurosoi-ulis 2016
نویسندگان
چکیده
In quest of new (”post-CMOS”) switches, in particular for ultra-low power application, the Tunnel Field Effect Transistor (TFET) [1] raised a lot of attention. The working principle of this device is the generation of electron-hole pairs by band-to-band tunneling (BTBT) between the valence band (VB) and the conduction band (CB). Thus, contrary to the common MOSFET, the source of current in a TFET is not thermionic injection, but inter-band generation.The inter-band tunnel transitions can be either direct (at the Γ-point) or indirect (e.g. from the Γ-point to the k-point of the minimum of the CB valleys as in silicon). In the latter case a phonon is needed for momentum conservation. A TFET is essentially a gated, reversed-biased pin diode, and the width of the tunnel barrier is modulated by the gate voltage. It is even possible to turn on the BTBT generation quickly as a consequence of the gate-induced energetic alignment between CB and VB, which eventually results in an average slope (averaged over 3 4 decades in the current after the onset of BTBT) steeper than 60mV/dec. That’s why TFETs belong to the so-called ”steepslope devices”.
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